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Diffused Silicon Pressure Sensor

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* High stability, high precision
* Pressure range:0-40Kpa…7Mpa
* Wide operable temperature range -40-125℃
* Compatible with corrosive media (compatible with 316L)
* Standard package size
* Typical output:0-100mV
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Diffused Silicon Pressure Sensor Introduction

Diffusion Silicon Pressure Sensor utilizes the principle of piezoresistive effect, adopts integrated process technology to dope and diffuse, and forms a strain resistance along the characteristic crystal orientation on the single crystal silicon wafer to form a Wheatstone bridge. By using the elastic mechanical properties of silicon materials and performing anisotropic micromachining on the same silicon-cut material, a diffused silicon sensor integrating force-sensitive and force-electric conversion detection is fabricated.


The pressure of the diffused silicon pressure sensor acts directly on the diaphragm of the sensor (stainless steel or ceramic), causing the diaphragm to produce a micro-displacement proportional to the pressure of the medium, causing a change in the resistance of the sensor, and detecting this change with an electronic circuit. And convert and output a standard measurement signal corresponding to this pressure.

Diffused Silicon Pressure Sensor Feature

  • Widely pressure range from 0~400bar


  • Various electrical connectors available: can be OEM custom various parameters


  • Various industrial standard signal output:4~20mA,0~10V,0~5V,1~5V,0.5~4.5V optional


  • Wide temperature range: -40 ~ 125℃, autocorrection temperature drift


  • Moisture-proof design: Stable performance in very humid environment


  • Harsh working environment without delay: Response time ≤1ms


  • Compact dimension design


Diffused Silicon Pressure Sensor Specification 

Range:0 ~ 10KPa ~ 35MPa
Withstand voltage:three times the range value
Comprehensive accuracy:0.2% FS, 0.5% FS
Input and output signals:4-20mA (two-wire system), 0-5 / 1-5 / 0-10VDC (three-wire system)
Supply voltage:24VDC (10-30VDC)
Medium temperature:-20 ~ 65 ℃
Ambient temperature:-20 ~ 65 ℃
Load resistance:Current output type: maximum 800Ω; voltage output type: greater than 50KΩ
Insulation resistance:Greater than 2000MΩ (100VDC)
Sealing grade:IP65
Long-term stability:0.1% FS / year
Vibration effect:Within the mechanical vibration frequency 20Hz ~ 1000Hz, the output change is less than 0.1% FS
Electrical interface:Hessman connector ( Support customization)
Mechanical connection (thread interface):M20 × 1.5, G1 / 2

-Manuals

Diffused Silicon Pressure Sensor

-Data sheet


Diffused Silicon Pressure Sensor Application

  • Mechanical engineering Industry

  • Industrial automation measuring

  • Hydraulic and level measurement

  • Gas tank pressure monitoring

  • Industrial test and control

  • Other industrial applications

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